AOW12N65/aowf12n65 650v, 12a n-channel mosfet general description product summary v ds i d (at v gs =10v) 12a r ds(on) (at v gs =10v) < 0.72 w 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. c/w -- maximum junction-to-case 0.45 4.5 maximum case-to-sink a v/ns 5 48 0.5 278 28 2.2 0.22 a units aowf12n65 pulsed drain current c mj c/w derate above 25 o c parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range maximum junction-to-ambient a,d mj v 30 gate-source voltage t c =100c a 12 12* 7.7 7.7* continuous drain current the AOW12N65 & aowf12n65 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providi ng low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 750v@150 drain-source voltage 650 AOW12N65 t c =25c i d avalanche current c 375 single plused avalanche energy g 750 5 repetitive avalanche energy c t c =25c thermal characteristics 300 -55 to 150 w w/ o c c power dissipation b p d c c/w aowf12n65 AOW12N65 65 65 g ds top view to-262f bottom view g d s g d s aowf12n65 top view to-262 bottom view g d s g d s AOW12N65 rev1:jul 2011 www.aosmd.com page 1 of 6 free datasheet http:///
AOW12N65/aowf12n65 symbol min typ max units 650 750 bv dss / ? tj 0.72 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 3.9 4.5 v r ds(on) 0.57 0.72 w g fs 17 s v sd 0.71 1 v i s maximum body-diode continuous current 12 a i sm 48 a c iss 1430 1792 2150 pf c oss 105 152 198 pf c rss 6.5 11.5 18 pf r g 1.7 3.5 5.3 w q g 32 39.8 48 nc q gs 7.5 9.2 11 nc q gd 8 16.8 25 nc t d(on) 36 ns t r 77 ns t d(off) 120 ns t f 63 ns t rr 300 375 450 ns q rr 6 7.5 9 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =6a reverse transfer capacitance i f =12a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =6a forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =650v, v gs =0v diode forward voltage v ds =5v i d =250 m a v ds =520v, t j =125c turn-off delaytime v gs =10v, v ds =325v, i d =12a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =520v, i d =12a gate source charge gate drain charge bv dss body diode reverse recovery charge i f =12a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =5a, v dd =150v, r g =25 ? , starting t j =25c rev1: jul 2011 www.aosmd.com page 2 of 6 free datasheet http:///
AOW12N65/aowf12n65 typical electrical and thermal characteristics 2.2 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0 4 8 12 16 20 24 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =6a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev1: jul 2011 www.aosmd.com page 3 of 6 free datasheet http:///
AOW12N65/aowf12n65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =520v i d =12a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for AOW12N65 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for aowf12n65 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 10s 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 t case (c) figure 11: current de-rating (note b) current rating i d (a) rev1: jul 2011 www.aosmd.com page 4 of 6 free datasheet http:///
AOW12N65/aowf12n65 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 12: normalized maximum transient thermal imp edance for AOW12N65 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.45c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 13: normalized maximum transient thermal imp edance for aowf12n65 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev1: jul 2011 www.aosmd.com page 5 of 6 free datasheet http:///
AOW12N65/aowf12n65 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev1: jul 2011 www.aosmd.com page 6 of 6 free datasheet http:///
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